Xiamen Powerway Advanced Material Co. Mitch Morse Hoodie ,Ltd (PAM-XIAMEN), the leading developer and supplier of compound semiconductor crystal and wafer, which offer GaN template as follows:
N type, Si doped GaN template N type, undoped GaN template Semi-insulating, Fe doped GaN template P type, Mg doped GaN template AlN template InGaN templates Free Standing GaN template
They exhibit industry leading low defect densities and are epi ready for subsequent device epitaxy
For detail specs Chris Jones Hoodie , please see below: 1)N type, Si doped GaN template
Conduction Type: Si doped (N+) Thickness:4um,20um,30um,50um,100um Orientation: c-axis (0001) ± 1.0° Resistivity: <0.05 Ohm.cm Dislocation Density:<1x108cm-2 Substrate Structure: GaN on Sapphire(0001) Front Surface Finish (Ga-face): As-grown Back Surface Finish: SSP or DSP Usable Area: ≥ 90 %
Available Sizes: 2” (50.8 mm), 3” (76.2 mm) and 4” (100 mm) Available Grades: Production Travis Kelce Hoodie , Research and Rider
2)N type, undoped GaN template
Conduction Type: undoped (N-) Thickness:4um,20um,30um,50um,100um Orientation: c-axis (0001) ± 1.0° Resistivity: <0.05 Ohm.cm Dislocation Density:<1x108cm-2 Substrate Structure: GaN on Sapphire(0001) Front Surface Finish (Ga-face): As-grown Back Surface Finish: SSP or DSP Usable Area: ≥ 90 %
Available Sizes: 2” (50.8 mm), 3” (76.2 mm) and 4” (100 mm) Available Grades: Production Justin Houston Hoodie , Research and Rider
3)Semi-insulating, Fe doped GaN template
Conduction Type: Fe doped (SI) Thickness:30um,90um Orientation: c-axis (0001) ± 1.0° Resistivity: >1x106Ω·cm Dislocation Density:<1x108cm-2 Substrate Structure: GaN on Sapphire(0001) Front Surface Finish (Ga-face): As-grown Back Surface Finish: SSP or DSP Usable Area: ≥ 90 %
Available Sizes: 2” (50.8 mm), 3” (76.2 mm) and 4” (100 mm) Available Grades: Production, Research and Rider
4)P type, Mg doped GaN template
Conduction Type: Mg doped (P+) Thickness:5um Orientation: C-axis(0001)+-1O Resistivity: <1Ω·cm or custom Dopant Concentration:>1E17(cm-3) or custom Substrate Structure: GaN on Sapphire(0001) Front Surface Finish (Ga-face): As-grown Back Surface Finish: SSP or DSP Usable Area: ≥ 90 %
Available Sizes: 2” (50.8 mm) Available Grades: Production, Research and Rider
5)AlN template
Conduction Type: semi-insulating Thickness:50-1000nm+- 10% Orientation: C-axis(0001)+-1O Orientation Flat:A-plane XRD FWHM of (0002):<200 arcsec Substrate Structure: AlN on sapphire Back Surface Finish: SSP or DSP Laurent Duvernay-Tardif Hoodie ,epi-ready Usable Area: ≥ 90 %
Available Sizes: 2” (50.8 mm), Available Grades: Production, Research and Rider
Available Sizes: 2” (50.8 mm) Available Grades: Production, Research and Rider
7)Free Standing GaN template
Available Sizes: 2”dia Kareem Hunt Hoodie ,1.8"dia,1.5"dia, 1"dia,14mm*15mm square,10mm*10.5mm square,5mm*5.5mm square Available Grades: LED grade, LD grade
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